general purpose transistors npn silicon features 1) we declare that the material of product compliant with rohs requirements and halogen free. 2) s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. device marking and resistor values device marking LMBT3904N3T5G 1a maximum ratings(ta = 25 ) parameter symbol limits unit collectorCemitter voltage v ceo 40 vdc collectorCbase voltage v cbo 60 vdc emitterCbase voltage v ebo 6 vdc collector current continuous i c 200 madc thermal characteristics total device dissipation, p d 250 mw fr?5 board (note 1) @ t a = 25c derate above 25c 2 mw/ thermal resistance, r ja 500 /w junctionCtoCambient(note 1) junction and storage temperature t j, tstg ?55 +150 1. frC5 = 1.00.750.062 in. electrical characteristics (ta= 25 ) off characteristics symbol min. typ. max. unit v (i c = 1.0 madc, i b = 0) 40 C C v br(cbo) v (i c = 10 adc, i e = 0) 60 C C emitterCbase breakdown voltage v br(ebo) v (i e = 10 adc, i c = 0) 6 C C i cex na ( v ce = 30 vdc, v eb = 3.0vdc) C C 50 base cutoff current i bl na (v ce = 30 vdc, v eb = 3.0 vdc) C C 50 on characteristics (note 2.) h fe (i c = 0.1 madc, v ce = 1.0 vdc) 40 C C (i c = 1.0 madc, v ce = 1.0 vdc) 70 C C (i c = 10 madc, v ce = 1.0 vdc) 100 C 300 (i c = 50 madc, v ce = 1.0 vdc) 60 C C (i c = 100 madc, v ce = 1.0 vdc) 30 C C characteristic collectorCemitter breakdown voltage v br(ceo) collectorCbase breakdown voltage collector cutoff current dc current gain shipping 10000/tape&reel LMBT3904N3T5G s-LMBT3904N3T5G leshan radio company, ltd. rev.a 1/5 june,2015 2 emitter 3 collector 1 base 1 2 3 sot883
LMBT3904N3T5G,s-LMBT3904N3T5G on characteristics (note 2.) symbol min. typ. max. unit v (i c = 10 madc, i b = 1.0 madc) C C 0.2 (i c = 50madc, i b = 5.0 madc) C C 0.3 v (i c = 10 madc, i b = 1.0 madc) 0.65 C 0.85 (i c = 50madc, i b = 5.0 madc) C C 0.95 smallCsignal characteristics f t mhz (i c = 10madc, v ce = 20vdc, f = 100mhz) 300 C C c obo pf (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) C C 4 c ibo pf (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) C C 8 input impedance h ie k (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) 1 C 10 voltage feedback ratio h re x 10 C4 (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) 0.5 C 8 smallCsignal current gain h fe (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) 100 C 400 output admittance h oe mhos (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) 1 C 40 noise figure nf db (v ce =5v, i c =100a, r s =1.0k , f =1.0khz) C C 5 switching characteristics delay time t d C C 35 rise time t r C C 35 storage time t s C C 200 fall time t f C C 50 2. pulse test: pulse width <300 s, duty cycle <2.0%. currentCgain bandwidth product output capacitance ns collectorCemitter saturation voltage(2) v ce(sat) input capacitance (v cc = 3.0 vdc, v be = C 0.5 vdc,i c = 10 madc, i b1 = 1.0 madc) (v cc = 3.0 vdc, i c = 10 madc,i b1 = i b2 = 1.0 madc) baseCemitter saturation voltage v be(sat) characteristic leshan radio company, ltd. rev.a 2/5 june,2015 figure 1. delay and rise time equivalent test circuit figure 2. storage and fall time equivalent test circuit +3 v 275 10 k 1n916 c s < 4 pf* +3 v 275 10 k c s < 4 pf* < 1 ns -0.5 v +10.9 v 300 ns duty cycle = 2% < 1 ns -9.1 v +10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors ? ?
LMBT3904N3T5G,s-LMBT3904N3T5G figure 4. current gain figure 5. dc current gain figure 6. collector saturation region figure 3. capacitance electrical characteristics curves 1 10 0.1 1 10 c,capacitance(pf vr, reverse voltage (v) cobo cibo 0 20 40 60 80 100 120 140 160 180 0.1 1 10 hfe, dc current gain ic, collector current (ma) 1 10 100 1000 0.1 1 10 100 hfe, dc current gain ic, collector current (ma) 25 150 - 55 vce=1v 0 0.2 0.4 0.6 0.8 1 0.001 0.01 0.1 1 10 vce, collector emitter voltage (v) ib, base current (ma) ic=1ma ic=10ma ic=30ma ic=100ma leshan radio company, ltd. rev.a 3/5 june,2015
LMBT3904N3T5G,s-LMBT3904N3T5G figure 9. vbe(on) vs. ic figure 7. vce(sat) vs. ic figure 8. vbe(sat) vs. ic electrical characteristics curves 0 0.5 1 1.5 2 2.5 0.001 0.01 0.1 1 vcesat, collector - emitter saturation voltage (v) ic, collector current(a) 25 150 - 55 ic/ib=10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.0001 0.001 0.01 0.1 1 vbesat, base - emitter saturation voltage(v) ic, collector current(a) 25 150 - 55 ic/ib= 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.0001 0.001 0.01 0.1 1 vbe(on), base - emitter voltage(v) ic, collector current(a) 25 150 - 55 vce= 1 v leshan radio company, ltd. rev.a 4/5 june,2015
LMBT3904N3T5G,s-LMBT3904N3T5G sot-883 leshan radio company, ltd. rev.a 5/5 june,2015 unit:mm dimension outline:
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